Model/Brand/Package
Category/Description
Inventory
Price
Data
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Category: IGBTtransistorDescription: INFINEON IKB10N60T Single transistor, IGBT, 10A, 2.05V, 110W, 600V, TO-263, 3-pin6023 -
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Category: IGBTtransistorDescription: IGBT Discrete, On Semiconductor Insulated Gate Bipolar Transistor (IGBT), used for motor drivers and other high current switching applications. ###IGBT discrete, On Semiconductor insulated gate bipolar transistor or IGBT is a three terminal power semiconductor device known for its high efficiency and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.1292 -
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Category: IGBTtransistorDescription: Ignition IGBT 20 Amp, 350 Volt, N-channel DPAK Ignition IGBT 20 Amp, 350 Volt, N-channel DPAK2566 -
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Category: IGBTtransistorDescription: ON SEMICONDUCTOR NGD18N40ACLBT4G Single transistor, IGBT, 18 A, 1.8 V, 115 W, 400 V, TO-252, 3 pins8637 -
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Category: IGBTtransistorDescription: IGBT Discrete, On Semiconductor Insulated Gate Bipolar Transistor (IGBT), used for motor drivers and other high current switching applications. ###IGBT discrete, On Semiconductor insulated gate bipolar transistor or IGBT is a three terminal power semiconductor device known for its high efficiency and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.5347 -
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Category: IGBTtransistorDescription: IGBT 高达 20A，Infineon 优化的 IGBT 设计用于中频应用，可快速响应，为用户提供最大效率。 这些设备利用 FRED 经优化的二极管，从而提供最佳的 IGBT 性能 ### IGBT 晶体管，International Rectifier International Rectifier 提供全面的 IGBT（绝缘栅级双极性晶体管）产品组合，范围从 300V 到 1200V，采用各种技术，可最大程度降低切换和传导损耗，从而提高效率、减少热敏问题并改善功率密度。 公司还提供多种 IGBT 压模，专门设计用于中到高功率模块。 对于需要最大可靠性的模块，可使用可焊接前部金属 (SFM) 压模来消除连接线，从而实现双面冷却，提高热敏性能、可靠性和效率。1804 -
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Category: IGBTtransistorDescription: STMICROELECTRONICS STGD18N40LZT4 单晶体管, IGBT, 25 A, 1.35 V, 125 W, 390 V, TO-252, 3 引脚4131 -
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Category: IGBTtransistorDescription: ROHM RGT16NS65DGTL 单晶体管, IGBT, 场截止沟道, 16 A, 1.65 V, 94 W, 650 V, TO-263S, 3 引脚8282 -
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Category: IGBTtransistorDescription: FAIRCHILD SEMICONDUCTOR ISL9V3040S3ST 单晶体管, IGBT, 21 A, 1.25 V, 150 W, 400 V, TO-263AB, 3 引脚8553 -
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Category: IGBTtransistorDescription: FAIRCHILD SEMICONDUCTOR ISL9V5036S3ST 单晶体管, IGBT, 46 A, 1.17 V, 250 W, 360 V, TO-263AB, 3 引脚4137 -
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Category: IGBTtransistorDescription: IGBT 分立，STMicroelectronics ### IGBT 分立件和模块，STMicroelectronics 绝缘栅级双极性晶体管或 IGBT 是一种三端子功率半导体设备，以高效和快速切换著称。 IGBT 通过将用于控制输入的隔离栅极 FET 和用作开关的双极性功率晶体管组合在单个设备中，将 MOSFET 的简单栅极驱动特性与双极性晶体管的高电流和低饱和电压能力组合在一起。1276 -
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 1.2kV 80A 3Pin(3+Tab) Power TO-247 T/R2804 -
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Category: IGBTtransistorDescription: IGBT 分立，Fairchild Semiconductor ### IGBT 分立件和模块，Fairchild Semiconductor 绝缘栅级双极性晶体管或 IGBT 是一种三端子功率半导体设备，以高效和快速切换著称。 IGBT 通过将用于控制输入的隔离栅极 FET 和用作开关的双极性功率晶体管组合在单个设备中，将 MOSFET 的简单栅极驱动特性与双极性晶体管的高电流和低饱和电压能力组合在一起。5078 -
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Category: IGBTtransistorDescription: IGBT 分立，STMicroelectronics ### IGBT 分立件和模块，STMicroelectronics 绝缘栅级双极性晶体管或 IGBT 是一种三端子功率半导体设备，以高效和快速切换著称。 IGBT 通过将用于控制输入的隔离栅极 FET 和用作开关的双极性功率晶体管组合在单个设备中，将 MOSFET 的简单栅极驱动特性与双极性晶体管的高电流和低饱和电压能力组合在一起。1817 -
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Category: IGBTtransistorDescription: IGBT 分立，Fairchild Semiconductor ### IGBT 分立件和模块，Fairchild Semiconductor 绝缘栅级双极性晶体管或 IGBT 是一种三端子功率半导体设备，以高效和快速切换著称。 IGBT 通过将用于控制输入的隔离栅极 FET 和用作开关的双极性功率晶体管组合在单个设备中，将 MOSFET 的简单栅极驱动特性与双极性晶体管的高电流和低饱和电压能力组合在一起。9935
